| Parent Group | High Purity Metals |
|---|
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99.9% Erbium Metal Ingot
| CAS # | 7440-52-0 |
|---|
| Product # | 0518-0013-09-30 |
|---|
| Parent Group | High Purity Metals |
|---|
| Molecular Weight | 382.56 |
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| MDL # | MFCD00010987 |
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| EINECS # | 231-160-1 |
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| Formula | Er |
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| Sizes | 1pc |
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| PubChem URL: | https://pubchem.ncbi.nlm.nih.gov/compound/23980 |
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99.9% Erbium Metal Ingot
| CAS # | 7440-52-0 |
|---|
| Product # | 0518-0013-09-30 |
|---|
| Parent Group | High Purity Metals |
|---|
| Molecular Weight | 382.56 |
|---|
| MDL # | MFCD00010987 |
|---|
| EINECS # | 231-160-1 |
|---|
| Formula | Er |
|---|
| Sizes | 1pc |
|---|
Chemical Properties
| Form | Ingot |
|---|
| Purity | 99.90% |
|---|
| Morphology | Variable |
|---|
| Boiling Point | 2868 ?C |
|---|
| Melting Point | 1497 ?C |
|---|
Applications
| Erbium Sputtering Targets with the highest possible density High Purity (99.999%) Erbium (Er) Sputtering Targetand smallest possible average grain sizes for use in semiconductor | chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications |
Notes
| Erbium Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading | beveling | grooves and backing designed to work with both older sputtering devices as well as the latest process equipment | such as large area coating for solar energy or fuel cells and flip-chip applications |
| Bulk Density | 9066kg/m ? |
|---|
| True Density | N/A |
|---|
| Particle Size | 820 mm |
|---|
| Storage & Sensitivity | Stored in vacuum conditions to avoid the adhesion layer oxidation |
|---|
Chemical Properties
| Form | Ingot |
|---|
| Purity | 99.90% |
|---|
| Morphology | Variable |
|---|
| Boiling Point | 2868 ?C |
|---|
| Melting Point | 1497 ?C |
|---|
Applications
| Erbium Sputtering Targets with the highest possible density High Purity (99.999%) Erbium (Er) Sputtering Targetand smallest possible average grain sizes for use in semiconductor | chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications |
Notes
| Erbium Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading | beveling | grooves and backing designed to work with both older sputtering devices as well as the latest process equipment | such as large area coating for solar energy or fuel cells and flip-chip applications |
| Bulk Density | 9066kg/m ? |
|---|
| True Density | N/A |
|---|
| Particle Size | 820 mm |
|---|
| Storage & Sensitivity | Stored in vacuum conditions to avoid the adhesion layer oxidation |
|---|
Chemical Properties
| Form | Ingot |
|---|
| Purity | 99.90% |
|---|
| Morphology | Variable |
|---|
| Boiling Point | 2868 ?C |
|---|
| Melting Point | 1497 ?C |
|---|
| Bulk Density | 9066kg/m ? |
|---|
| True Density | N/A |
|---|
| Particle Size | 820 mm |
|---|
| Storage & Sensitivity | Stored in vacuum conditions to avoid the adhesion layer oxidation |
|---|
Applications
| Erbium Sputtering Targets with the highest possible density High Purity (99.999%) Erbium (Er) Sputtering Targetand smallest possible average grain sizes for use in semiconductor | chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications |
Notes
| Erbium Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading | beveling | grooves and backing designed to work with both older sputtering devices as well as the latest process equipment | such as large area coating for solar energy or fuel cells and flip-chip applications |